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SHINDENGEN Super Fast Recovery Rectifiers Single D1NL40 400V 0.9 A FEATURES *oe Low noise *oe trr50ns *oe mm pitch mounting applicable 5 APPLICATION *oe Switching power supply *oe Free Wheel *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation OUTLINE DIMENSIONS Case : AX057 Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage VRM 400 Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25*Z IO 0.9 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 25 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =0.9A, Pulse measurement Reverse Current IR V=V , Pulse measurement R RM Reverse Recovery Time trr IF =0.5A,*@ I R =1A Thermal Resistance AEjl junction to lead AEja junction to ambient, On P.C.B. Lead length=5mm Unit *Z *Z V A A Ratings Unit Max.1.3 V Max.10 EA Max.50 ns Max.10 *Z/W Max.113 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D1NL40 10 Forward Voltage 1 Forward Current IF [A] Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] 0.1 Pulse measurement per diode 0.01 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 Forward Voltage VF [V] D1NL40 1.6 1.4 Forward Power Dissipation DC D=0.8 Forward Power Dissipation PF [W] 1.2 1 0.8 0.05 0.6 0.4 0.2 0 0.1 0.3 0.2 0.5 SIN 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Average Rectified Forward Current IO [A] Tj = Tjmax IO 0 tp D=tp /T T D1NL40 1.6 Derating Curve Average Rectified Forward Current IO [A] 1.4 DC 1.2 1 0.5 SIN D=0.8 l Glass-epoxy substrate l = 5mm 0.8 0.3 0.6 0.4 0.2 0 0.2 0.1 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM IO 0 0 VR tp D=tp /T T D1NL40 35 Peak Surge Forward Capability IFSM 10ms 10ms 30 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 25 20 15 10 5 0 1 2 5 10 20 50 100 Number of Cycles [cycles] D1NL40 Junction Capacitance 100 f=1MHz Tl=25C TYP per diode Junction Capacitance Cj [pF] 10 1 10 1 100 Reverse Voltage VR [V] |
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